International Journal

The silicon vertical MOSFET RF power amplifier described in this paper is the industry?s first to utilize high-voltage vertical technology. Operating under pulse conditions of 200 µs pulse width and 10% duty cycle, it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P1dB compr

Low-cost enabling technologies for T/R modules (TRMs) in phased array radars are proposed and analyzed in terms of technology, performance, and cost aspects. Phase and amplitude controlling integrated circuits (ICs) realized in a low-cost standard silicon process are demonstrated. The design of several ICs at the S-, C-, on X-band has shown that silicon germanium is a strong contender for gallium

The use of 130-nm CMOS for power amplifiers at 20 GHz is explored through a set of power amplifiers as well as transistor level measurements. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, and the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor-level characte

A fast, yet unconditionally stable, solution of time-domain electric field integral equations (TD EFIE) pertinent to the scattering analysis of uniformly meshed and/or periodic conducting structures is introduced. A one-dimensional discrete fast Fourier transform (FFT)-based algorithm is proffered to expedite the calculation of the recursive spatial convolution products of the Toeplitz?block?Toepl

Metamaterial transmission lines can be realized as a combination of right- and left-handed transmission line (TL) sections exhibiting positive and negative dispersion. This approach gives additional degrees of freedom for improving the performance of microwave devices. Artificial right- and left-handed sections, which are based on lumped-element unit cells consisting of inductance and capacitances

An effective linearization technique capable of equalizing IM3 products resulting from an arbitrary out-of-band blocking scenario in a wideband direct conversion receiver is presented. IM3 products are regenerated in the RF analog domain of a low-power mixed-signal feedforward path and are used to cancel analogous signal terms in the original receiver at digital baseband via adaptive equalization.

This paper presents switched sequential amplifiers (SSAs) using reconfigurable directional couplers as power splitters and combiners. The SSA concept allows matching the efficiency characteristics to the amplitude probability density distribution of the applied modulated signal. Therefore the back-off efficiency can be increased significantly. A three-channel SSA can e.g. theoretically achieve a ?

The design of a subharmonic downconverter for 94-GHz imaging arrays in SiGe:C technology is presented. A three-stage differential low-noise amplifier (LNA) with lumped matching networks is used together with a subharmonic mixer driven by a single-pole local-oscillator poly-phase network to form the front-end. The LNA yields 15 dB gain at 94 GHz, while the mixer provides 5 dB conversion gain over a

Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel v

In millimeter-wave CMOS circuits, a balun is useful for connecting off-chip single-end devices and on-chip differential circuits to improve noise immunity. However, an on-chip balun occupies a large chip area. To reduce the chip area required for the on-chip balun, a new rat-race balun using a rewiring technology with a wafer-level chip-size package (W-CSP) is proposed. The W-CSP balun occupies no