International Journal
1993 documents found.
Integrated 79 GHz UWB automotive radar front-end based on Hi-Mission MCM-D silicon platform
Published online : 01-08-2010
Access
View abstract
A highly integrated silicon platform (Hi-Mission) for high frequency applications is introduced. This platform utilizes heterogeneous Multi-Chip Module-Deposited (MCM-D) technology with integrated passive devices together with silicon and GaAs Monolithic Microwave Integrated Circuit (MMIC) technology developed for the automotive Ultra Wide Band (UWB) radar (short-range radar) frequency band from 7
Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate
Published online : 01-08-2010
Access
View abstract
Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to ?solid state? technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF
Compact integrated slot array antennas for the 79 GHz automotive band
Published online : 01-08-2010
Access
View abstract
This paper presents two compact slot array antennas for the 79 GHz automotive band integrated into a 28 µm thick benzocyclobutene (BCB) substrate attached to a 325 µm thick 5?20 ? cm bulk resistivity silicon wafer. The two antennas are a transmit (TX) 1 × 8 slot array antenna with a size of 1 × 23 mm and a receive (RX) 8 × 8 slot array antenna with a size of 15 × 23 mm. Promising performance has b
Considerations on the de-embedding of differential devices using two-port techniques
Published online : 01-08-2010
Access
View abstract
Differential signaling is very common for high frequency integrated circuit design. Accurate multimode de-embedding at multigigahertz frequencies, however, is a major challenge. The differential and common-mode parameters can be obtained by converting the measured four-port nodal -parameters into the mixed-mode form. Under certain conditions, it is possible to separate the modes and consider only
Analysis of differential Doppler velocity for remote sensing of clouds and precipitation with dual-polarization S-band radar
Published online : 01-08-2010
Access
View abstract
This paper presents the results of Doppler-polarimetric radar signal analysis, computer modeling, and real data processing that show the correlation between differential Doppler velocity (DDV), which is a difference between mean Doppler velocities measured at orthogonal polarizations of electromagnetic waves, and parameters of rain including both rain microstructure (parameters of drop-size distri
Decision-directed phase noise compensation for millimeter-wave single carrier systems with iterative frequency-domain equalization
Published online : 01-08-2010
Access
View abstract
This paper proposes a receiver that repeats iterative frequency-domain equalization (FDE) and decision-directed phase noise compensation (DD-PNC) to alleviate degradation due to the phase noise for millimeter-wave single carrier (SC) systems. High bit-rate SC-FDE transceivers based on the single-chip Si RF-CMOS IC technology in the 60-GHz millimeter-wave band have been extensively studied for wire
New class of SiGe reduced-size loaded slow wave 60 GHz CPW series/shunt stubs and its applications to the design of slow wave bandpass filters
Published online : 01-08-2010
Access
View abstract
This paper proposes a practical approach for developing a new class of compact slow-wave coplanar waveguide (CPW) series/shunt stubs, which offer 40% reduction in size relative to a conventional design. It demonstrates that the technique using interdigitated capacitive loading can provide size and cost reductions, while also providing performance enhancements such as better return loss. The experi
International Journal of Microwave and Wireless Technology: Special Issue on European Microwave Week 2009
Published online : 01-08-2010
Access
A new nonlinear HEMT model for AlGaN/GaN switch applications
Published online : 01-08-2010
Access
View abstract
We present here a new set of equations for modeling the I?V characteristics of Field Effects Transistors (FETs), particularly optimized for AlGaN/GaN HEMTs. These equations describe the whole characteristics from negative to positive breakdown loci, and reproduce the current saturation at high level. Using this model enables to decrease the modeling process duration when a same transistor topology
Integration of numerical and field-theoretical techniques in the design of single- and multi-band rectennas for micro-power generation
Published online : 01-08-2010
Access
View abstract
We introduce an integrated design methodology for the optimization of RF-to-DC conversion efficiency of multi-band rectennas (rectifying antennas), with the aim of harvesting the RF energy available in humanized environments. Existing RF sources can either operate at known frequencies, power budgets, and locations, or can be ubiquitously available at different frequency bands, and with unknown dir